The materials with low dielectric constant and low dielectric loss are vital for high integration degree of the circuit board. Although many polymers like epoxy resin exhibit excellent comprehensive performance, their dielectric constant is unable to satisfy high electronic packaging application. In this work, we present a simple grafting strategy via reaction between the hollow glass microsphere and polyhedral oligomeric silsesquioxane followed by blending epoxy resin to fabricate epoxy resin hollow glass microspheres composite materials.
The superior heat resistance of hollow glass microspheres (HGM) can improve the thermal performance of composites. Due to the addition of Ge-POSS, P-HGM exhibited a good interfacial compatibility with epoxy resin matrix and forms an interfacial adhesion region.
With the P-HGM loading of 20 wt%, the fabricated composite materials exhibited the low dielectric constant of 2.59 and low dielectric loss of 0.0145. At the same time, the tensile strength, impact strength and flexural strength were 42.15 MPa, 24.33 kJ/m2 and 90.82 MPa, respectively, which demonstrated that the epoxy resin hollow glass microspheres composite materials processed superb mechanical behavior. It suggests that this method is a promising potential for fabricating low dielectric composite materials.